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InP/GaAs BASED SEMICONDUCTOR EPITAXIAL WAFERS

It Is Applied in Laser Communication, Laser Sensing, Laser Processing, and Mobile RF Power Amplifier

HUAXING OPTO FOCUSED ON EPITAXY

Focus on Research, Development and Manufacturing of Compound Semiconductor Epitaxial Wafers

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R&D & Manufacturing Experience

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National Patents

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Industrial Park Footprint

Products

The company produces semiconductor epitaxial wafers with various structures and functions based on indium phosphide (InP) and gallium arsenide (GaAs) substrates, utilizing metal-organic chemical vapor deposition (MOCVD), electron-beam/holographic lithography, and nanoimprint technologies.

Holds Core Expertise in the Design and Fabrication of Compound Semiconductor Epitaxial Wafers

Committed to Becoming a World-Leading Supplier of Compound Semiconductor Epitaxial Wafers

About Us

Jiangsu Huaxing Optoelectronics Technology Co., Ltd, founded in February 2016, is a high-tech company specializing in R&D and manufacturing of semiconductor epitaxial wafers. We mainly produce III-V compound semiconductor epitaxial wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates by using metal organic chemical vapor deposition (MOCVD), e-beam/holog…

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Service

The company has obtained ISO9001, ISO14001, and QC080000 management system certifications, adopts a process management approach, and has established a comprehensive production process management system that enables real-time monitoring and intervention. Through continuous improvement and innovation, it provides customers with high-quality, cost-effective products and services.

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